Semiconductor element forming process having a step of separating film structure from substrate

Abstract

The present invention is aimed at providing a process of forming a transistor of excellent properties and its circuit on a substrate of a low heat resistance in simple steps at a low treatment temperature and with high precision. According to an aspect of the invention, there is provided a process of forming a semiconductor device, comprising the steps of forming a separation layer on a support substrate, forming, on the separation layer, a film structure consisting of a single layer or plural layers, and separating the film structure from the support substrate by removing the separation layer. According to another aspect of the invention, there is provided a process of transferring a film structure which consists of a single layer or plural layers, comprising the steps of forming a separation layer on a first substrate, forming, on the separation layer, a film structure which consists of a single layer or plural layers, adhering a second substrate to the film structure, and separating the first substrate from the film structure. The film structure includes therein a semiconductor element such as a thin film transistor, a MOSFET, a bipolar transistor, a solar battery, etc., or an integrated circuit consisting of a plurality of such active elements. When air gaps are formed in the separation layer, the layer facilitates the separation of the first substrate from the film structure.

Dependencies are inferred from the claim text.