Method of manufacturing of semiconductor device having low leakage current
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorTSUKASA OOISHI
Life of this patent
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Abstract
A field oxide film is provided in the surface of a semiconductor substrate. An interlayer insulating film is provided on the semiconductor substrate so as to cover an active layer. A contact hole exposing the surface of the active layer is provided in the interlayer insulating film. A conductor fills the contact hole so as to be electrically connected to the surface of the active layer. The end portion of the field oxide film has a surface perpendicular with respect to the surface of the semiconductor substrate. As a result, a dynamic random access memory can be obtained which is improved so that leakage current is reduced, which in turn increases a hold time of information.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate;
- a field oxide film provided on said semiconductor substrate and isolating an active region from other active regions with its end portion surrounding the active region;
- an interlayer insulating film provided on said semiconductor substrate so as to cover said active region;
- a contact hole provided in said interlayer insulating film for exposing a part of a surface of said active region;
- and
- a conductor filling said contact hole so as to be electrically connected to the surface of said active region, wherein
- said end portion of said field oxide film has a surface perpendicular or approximately perpendicular with respect to a surface of said semiconductor substrate.
A semiconductor device, comprising:
- a semiconductor substrate;
- a field oxide film provided on said semiconductor substrate for isolating an active region from other active regions with its end portion surrounding the active region;
- an active layer provided in a surface of said active region;
- an interlayer insulating film provided on said semiconductor substrate so as to cover said active region;
- a contact hole provided in said interlayer insulating film for exposing the surface of said active layer;
- and
- a conductor filling said contact hole so as to come in contact with said active layer, wherein
- said active layer is formed apart from said end portion of said field oxide film so as not to come in contact therewith.
A semiconductor substrate, comprising:
- a semiconductor substrate;
- a recessed portion provided in a portion other than an active region in a surface of said semiconductor substrate;
- an insulating film, formed with a chemical vapor deposition method, filling said recessed portion for isolating said active region from other active regions;
- a gate electrode formed on said active region;
- an interlayer insulating film provided on said semiconductor substrate so as cover said gate electrode;
- a contact hole provided in said interlayer insulating film for exposing a part of a surface of said active region;
- and
- a conductor provided on said semiconductor substrate so as to fill said contact hole.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a field oxide film in a surface of a semiconductor substrate for isolating an active region from other active regions with its end portion surrounding the active region;
- forming a gate electrode on said active region;
- forming an interlayer insulating film on said semiconductor substrate so as to cover said gate electrode;
- selectively etching said interlayer insulting film to form a contact hole exposing a part of a surface of said active region in said interlayer insulating film, and simultaneously etching away said end portion of said field oxide film;
- and
- filling said contact hole with a conductor connected to said active region.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a field oxide film in a surface of a semiconductor substrate for isolating an active region from other active regions with its end portion surrounding the active region;
- etching away said end portion of said field oxide film;
- sequentially forming an oxide film which is to serve as a gate insulating film and a conductor layer which is to serve as a gate electrode on said semiconductor substrate;
- patterning said oxide film and said conductor layer to form a gate insulting film and a gate electrode;
- forming an interlayer insulating film on said semiconductor substrate so as to cover said gate electrode;
- forming a contact hole exposing a part of a surface of said active region in said interlayer insulating film;
- and
- filling said contact hole with a conductor connected to the surface of said active region.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a recessed portion in a portion other than an active region in a surface of a semiconductor substrate;
- filling said recessed portion with an insulating film;
- forming a gate electrode on said active region;
- forming an interlayer insulating film on said semiconductor substrate so as to cover said gate electrode;
- forming a contact hole exposing a part of a surface of said active region in said interlayer insulating film;
- and
- filling said contact hole with a conductor electrically connected to the surface of said active region.
Dependencies are inferred from the claim text.