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US 2001/0012667 A1Published application
Clustered system and method for formation of integrated circuit devices
OwnerYi Ma, Kurt George Steiner +1inventors
InventorsYi Ma, Kurt George Steiner, Minseok Oh
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Abstract
A method for forming high quality integrated circuit devices and apparatus therefor. The method includes the steps of forming an oxide layer on a semiconductor material wafer and then depositing a nitride or oxynitride layer over the oxide layer. All steps being taken without exposing the wafer to surrounding atmosphere. The invention also relates to a cluster tool for carrying out the above steps.
Claims7
A method for forming an integrated circuit device comprising:
- placing a semiconductor material wafer into a vacuum chamber and growing an oxide layer thereon to form an oxide gate-dielectric;
- and
- moving the wafer into an adjacent chemical vapor deposition vacuum chamber without exposure to surrounding atmosphere and forming a nitride or oxynitride layer over the oxide gate-dielectric by a chemical vapor deposition process.
Dependencies are inferred from the claim text.