Semiconductor processing methods of forming encapsulant over semiconductive dies, and methods of forming die packages

A method of forming a die package, comprising:

• providing an insulative substrate having a slit extending therethrough, the substrate comprising an underside and an opposing topside;
• providing circuitry being over the topside of the insulative substrate;
• providing a semiconductive-material-comprising die beneath the underside of the insulative substrate and having a surface exposed through the slit in the insulative substrate, there being a gap between the die and the underside of the insulative substrate, the die having an edge;
• injecting a radiation-curable material through the slit and into the gap;
• and
• directing radiation from over the edge to the gap to effectively cure at least a portion of the radiation-curable material within the gap and thus form a dam which impedes non-cured radiation-curable material from flowing beyond the edge.

A method of forming a die package, comprising:

• providing an insulative substrate having an underside and an opposing topside, circuitry being over the topside of the insulative substrate and a slit extending through the insulative substrate, the slit having a periphery bounded by a pair of opposing ends and a pair of opposing sidewalls;
• providing a semiconductive-material-comprising die beneath the underside of the insulative substrate and having a surface exposed through the slit in the insulative substrate, the die extending to beyond the ends and sidewalls of the slit periphery;
• providing a pair of spacers between the die and the insulative substrate, one of the pair of spacers being proximate one of the sidewalls of the slit periphery and an other of the spacers being proximate an other of the sidewalls of the slit periphery, the spacers spacing the die from the insulative substrate to define a gap between an upper surface of the die and the underside of the insulative substrate, the die having a pair of end edges and the gap extending from proximate one of the end edges to proximate the other of the end edges;
• injecting a radiation-curable material through the slit and into the gap;
• and
• directing radiation over the end edges to cure the radiation-curable material proximate the end edges and thus form a pair of dams which impede non-cured radiation-curable material from flowing beyond the end edges.