Single-substrate-heat-treating apparatus for semiconductor process system
AssigneeTokyo Electron Limited
InventorsWataru Okase, Masaaki Hasei
Life of this patent
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Abstract
A heat-treating apparatus is arranged to perform a reforming process and a crystallizing process for tantalum oxide deposited on a semiconductor wafer. The apparatus includes a worktable with a heater incorporated therein. Under the worktable, there is a heat-compensating member formed of a thin plate and having a counter surface facing the bottom surface of the worktable along the periphery. The counter surface is formed of a mirror surface having a surface roughness of Rmax=25 μm or less. Heat rays and radiant heat are reflected by the counter surface and applied to the periphery of the worktable, thereby compensating the periphery for heat loss.
Claims20
A single-substrate-heat-treating apparatus for a semiconductor process system, comprising:
- an airtight process chamber;
- a worktable arranged within said process chamber and having a top surface configured to place a target substrate thereon;
- an exhaust mechanism configured to exhaust said process chamber;
- a supply mechanism configured to supply a process gas into said process chamber;
- a heating mechanism configured to heat said target substrate placed on said worktable;
- and
- a heat-compensating member having a counter surface facing a bottom surface of said worktable along a periphery of said bottom surface.
A single-substrate-heat-treating apparatus for a semiconductor process system, comprising:
- an airtight process chamber;
- a worktable arranged within said process chamber and having a top surface configured to place a target substrate thereon;
- an exhaust mechanism configured to exhaust said process chamber;
- a supply mechanism configured to supply a process gas into said process chamber;
- and
- a heating mechanism configured to heat said target substrate placed on said worktable;
- wherein said supply mechanism comprises a shower head including an outside pipe having a ring shape with a diameter larger than a diameter of said target substrate, and inside pipes connected to an inside of said outside pipe and combined to form a lattice, and wherein said inside pipes are provided with first spurting holes for spouting said process gas downward, and part of said inside pipes defining a central opening of said shower head are provided with second spurting holes for spouting said process gas inward in a horizontal direction.
Dependencies are inferred from the claim text.