Semiconductor laser, optical module using semiconductor laser and optical communication system

Abstract

A mask pattern of oxide film for selective MOVPE is formed on an InP substrate. The selective MOVPE growth is conducted by using the patterned substrate to directly form an active layer and an optical waveguide layer. An oxide film is formed on only the mesa top which is selectively grown in a self-align process to grow a current block layer. Subsequently, after the oxide film is removed, a p-clad layer is grown. In order to prevent the p-clad layer from being inverted to n-type due to high-concentration Si deposition in the p-clad layer and the p-clad layer interface just below the oxide film, the first layer of the p-clad layer is doped with high-concentration Zn to re-invert the inverted n-type re-growth interface to p-type, whereby a high-resistant layer formed at the re-growth interface is removed. Accordingly, holes flowing into the p-block layer can be effectively injected into an active layer, thereby implementing a semiconductor laser having an excellent oscillation characteristic.

Dependencies are inferred from the claim text.