Semiconductor memory device

Abstract

Sense amplifiers provided in a same bank are divided into groups, the sense amplifiers in each group are connected to a common power supply wiring for the sense amplifier which is independent by the group, and the power supply wiring for the sense amplifier of each group is connected to a power supply circuit which is independent so that the ratio of the activated sense amplifiers to the driven power supply circuits is equalized in a reading-out/writing-in operation in which at least one sub-block in the bank is activated and a refreshing operation in which the sub-blocks are concurrently activated, which makes it possible to prevent an insufficiency/excess of a driving capacity of overdrive, without providing a special controlling circuit separately.

Dependencies are inferred from the claim text.