US 2001/0012188 A1Published application

Spin-valve thin-film magnetic element and method for making the same

AssigneeAlps Electric Co., Ltd.

InventorsNaoya Hasegawa, Kenji Honda, Yoshihiko Kakihara

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Abstract

A spin-valve thin-film magnetic element includes a substrate, a composite formed thereon, and electrode layers formed on both sides of the composite. The composite includes an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, a mean-free-path-extending layer, and an exchange bias layer. The mean-free-path-extending layer may be a back layer or a mirror reflective layer. The mean-free-path-extending layer extends the mean free path of spin-up conduction electrons in the spin-valve thin-film magnetic element. This spin-valve thin-film magnetic element meets trends toward a narrower track width.

Claims36

Dependent claims

A spin-valve thin-film magnetic element comprising:

a substrate;
an antiferromagnetic layer;
a pinned magnetic layer in contact with the antiferromagnetic layer, the magnetization vector of the pinned magnetic layer being pinned by an exchange coupling magnetic field between the antiferromagnetic layer and the pinned magnetic layer;
a nonmagnetic conductive layer in contact with the pinned magnetic layer;
a free magnetic layer in contact with the nonmagnetic conductive layer;
an exchange bias layer for magnetizing the free magnetic layer so that the magnetization vector of the free magnetic layer is substantially orthogonal to the magnetization vector of the pinned magnetic layer;
a pair of electrode layers for supplying a sensing current to the pinned magnetic layer, the nonmagnetic conductive layer, and the free magnetic layer;
and
a mean-free-path-extending layer provided between the free magnetic layer and the exchange bias layer for controlling the magnitude of an exchange coupling magnetic field between the free magnetic layer and the exchange bias layer and for extending the mean free path of conduction electrons.

6 more elements

A method for making a spin-valve thin-film magnetic element comprising the steps of:

depositing an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, a mean-free-path-extending layer, and an exchange bias layer on a substrate;
annealing these layers at a first annealing temperature while applying a first magnetic field in a direction perpendicular to the track width direction to generate an exchange anisotropic magnetic field in the antiferromagnetic layer and another exchange anisotropic magnetic field in the exchange bias layer, the exchange anisotropic magnetic field of the antiferromagnetic layer being larger than the exchange anisotropic magnetic field of the exchange bias layer, so as to pin the magnetization vector of the pinned magnetic layer and the magnetization vector of the free magnetic layer in the same direction;
annealing these layers at a second annealing temperature higher than the first annealing temperature while applying a second magnetic field in the track width direction, the second magnetic field being larger than the exchange anisotropic magnetic field of the exchange bias layer and smaller than the exchange anisotropic magnetic field of the antiferromagnetic layer, to impart a bias magnetic field substantially orthogonal to the magnetization vector of the pinned magnetic layer to the free magnetic layer;
and
forming electrode layers for applying a sensing current to the free magnetic layer.

2 more elements

A method for making a spin-valve thin-film magnetic element comprising the steps of:

depositing an exchange bias layer, a mean-free-path-extending layer, a free magnetic layer, a nonmagnetic conductive layer, a pinned magnetic layer, and an antiferromagnetic layer on a substrate;
annealing these layers at a first annealing temperature while applying a first magnetic field in the track width direction to generate an exchange anisotropic magnetic field in the antiferromagnetic layer and another exchange anisotropic magnetic field in the exchange bias layer, the exchange anisotropic magnetic field of the exchange bias layer being larger than the exchange anisotropic magnetic field of the antiferromagnetic layer, so as to pin the magnetization vector of the pinned magnetic layer and the magnetization vector of the free magnetic layer in the same direction;
annealing these layers at a second annealing temperature higher than the first annealing temperature while applying a second magnetic field in a direction perpendicular to the track width direction, the second magnetic field being larger than the exchange anisotropic magnetic field of the antiferromagnetic layer and smaller than the exchange anisotropic magnetic field of the exchange bias layer, to impart an exchange coupling magnetic field substantially orthogonal to the magnetization vector of the free magnetic layer to the pinned magnetic layer;
and
forming electrode layers for applying a sensing current to the free magnetic layer.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application: 09/774,781Filed 30 Jan 2001
Priority: JP 2000-0256592 Feb 2000
Published: 9 Aug 2001
Term ends: Not estimatedThe source records don’t support an estimate.

Classification14 codes

G11B 5/3903
Using magneto-resistive devices or effects: using magnetic thin film layers or their effects, the films being part of integrated structures
B82Y 10/00
Nanotechnology for information processing, storage or transmission
B82Y 25/00
Nanomagnetism
B82Y 40/00
Manufacture or treatment of nanostructures

Family

US 7,054,115 B2Related patent
US 2001/0012188 A1This patent

From the US filing history. Foreign family members aren’t listed.

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