Semiconductor device having a ball grid array and a fabrication process thereof

A semiconductor device, comprising:

• a semiconductor chip having a top principal surface, said semiconductor chip carrying a plurality of bump electrodes on said top principal surface;
• a resin layer covering said top principal surface of said semiconductor chip so as to seal said semiconductor chip,
• said semiconductor chip and said resin layer thereby forming a composite semiconductor structure defined by a side wall having a plurality of corners, and
• a step surface formed in said resin layer along said side wall of said composite structure.

A method of fabricating a semiconductor device, comprising the steps of:

• forming a resin layer on a principal surface of a semiconductor substrate;
• grooving said resin layer along a dicing line on said semiconductor substrate to form a V-shaped groove having a substantially V-shaped cross-section such that said V-shaped groove reaches said semiconductor substrate;
• and
• dicing, after said step of grooving, said semiconductor substrate along said V-shaped groove by forming a dicing groove with a width smaller than a width of said V-shaped groove.

A method of fabricating a semiconductor device, comprising the steps of:

• forming a resin layer on a principal surface of a semiconductor substrate;
• dicing said semiconductor substrate along a dicing line by forming a dicing groove through said resin layer and through said semiconductor substrate;
• and
• grooving, after said step of dicing of said semiconductor substrate, said resin layer along said dicing line to form a V-shaped groove having a substantially V-shaped cross-section in said resin layer such that said V-shaped groove has a width larger than a width of said dicing groove and reaches said semiconductor substrate.

A method of fabricating a semiconductor device, comprising the steps of:

• forming a resin layer on a principal surface of a semiconductor substrate;
• grooving said resin layer along a dicing line on said semiconductor substrate to form a first groove having a substantially rectangular cross-section and a first width in said resin layer;
• and
• dicing, after said step of grooving, said semiconductor substrate along said first groove by forming a second groove with a second width smaller than said first width of said first groove.

A method of fabricating a semiconductor device, comprising the step of:

• adhering a semiconductor substrate on a dicing apparatus by an adhesive tape;
• dicing said semiconductor substrate in a first direction such that said adhesive tape remains substantially intact;
• dicing said semiconductor substrate in a second, different direction together with said adhesive tape, to form a plurality of adhesive strips each carrying thereon a plurality of semiconductor chips aligned in a row;
• and
• applying a V-shaped saw blade having a V-shaped saw edge laterally to each of said adhesive strips such that said V-shaped saw blade cuts into a gap formed between a pair of adjacent semiconductor chips by said dicing step conducted in said first direction, said saw blade thereby forming a chamfer surface on a side wall of said semiconductor chips such that said chamfer surface extends, in each of said semiconductor chips, generally perpendicularly to a principal surface of said semiconductor chip.

A method of fabricating a semiconductor device, comprising the steps of:

• forming a V-shaped groove on a top surface of a semiconductor substrate, said semiconductor device carrying an electronic circuit on said top surface;
• forming a resin layer on said top surface of said semiconductor substrate so as to fill said V-shaped groove;
• and
• dicing said semiconductor substrate by a dicing saw having a blade width smaller than a width of said V-shaped groove, along said V-shaped groove.

A method of fabricating a semiconductor device, comprising the steps of:

• slicing a semiconductor substrate from a semiconductor ingot;
• applying a resin layer on a first surface of said semiconductor substrate such that said resin layer has a planarized surface;
• grinding a second surface of said semiconductor substrate while using said planarized surface of said resin layer as a reference surface, to form a planarized surface on said second surface;
• and
• grinding said first surface while using said second, planarized surface as a reference surface, to form a planarized surface on said first surface.

A transportation device of a semiconductor device, comprising:

• a tray member adapted to support a semiconductor device in a face-down state, said semiconductor device carrying a plurality of bump electrodes thereon, said tray member having an opening for accommodating said bump electrodes when said semiconductor device is mounted on said tray member;
• and
• a removable cap member provided on said tray member removably, said removable cap member covering said tray member in a state in which said semiconductor device is mounted on said tray member,
• wherein said tray member includes a chamfer surface for engagement with a corresponding chamfer surface formed on said semiconductor device.

A transportation device of a semiconductor device, comprising:

• a tray member adapted to support a semiconductor device in a face-down state, said semiconductor device carrying a plurality of bump electrodes thereon, said tray member having an opening for accommodating said bump electrodes when said semiconductor device is mounted on said tray member;
• and
• a removable cap member provided on said tray member removably, said removable cap member covering said tray member in a state in which said semiconductor device is mounted on said tray member,
• wherein said tray member includes a step surface for engagement-with a corresponding step surface formed on said semiconductor device.

A method of fabricating a semiconductor device, comprising the steps of:

• mounting a semiconductor device having a chamfered surface and a plurality of bump electrodes on a transportation device,
• said transportation device comprising a tray member adapted to support said semiconductor device in a face-down state, said tray member having an opening for accommodating said bump electrodes when said semiconductor device is mounted on said tray member, and a removable cap member provided on said tray member removably, said removable cap member covering said tray member in a state in which said semiconductor device is mounted on said tray member, said tray member including a chamfer surface for engagement with said chamfer surface on said semiconductor device;
• and
• transporting said semiconductor device in a state mounted on said transportation device.

A method of fabricating a semiconductor device, comprising the steps of:

• mounting a semiconductor device having a stepped surface and a plurality of bump electrodes on a transportation device,
• said transportation device comprising a tray member adapted to support said semiconductor device in a face-down state, said tray member having an opening for accommodating said bump electrodes when said semiconductor device is mounted on said tray member, and a removable cap member provided on said tray member removably, said removable cap member covering said tray member in a state in which said semiconductor device is mounted on said tray member, said tray member including a stepped surface for engagement with said stepped surface on said semiconductor device;
• and
• transporting said semiconductor device in a state mounted on said transportation device.