Semiconductor devices including electrode structures

A method for manufacturing a semiconductor device comprising:

• forming a capacitive element above a substrate;
• forming an layer of material at least partially in contact with said capacitive element, said material selected from the group consisting of a TiN, titanium nitride containing oxygen atoms and MoSix;
• and
• forming an electrode for said capacitive element from said layer.

A method for manufacturing a semiconductor device comprising:

• forming an insulating layer above a semiconductor substrate;
• forming a conducting region above said insulating layer, said conducting region selected from the group consisting of a gate electrode and an undercoat wiring;
• forming a dielectric layer above said conducting region;
• forming a film selected from the group consisting of a TiN film, a titanium nitride containing oxygen atoms film, and an MoSix film;
• forming an electrode for a capacitive element above said dielectric layer by processing said film;
• and
• forming an out-going electrode connected to said electrode for said capacitive element.

A method for manufacturing a semiconductor device comprising:

• forming an insulating layer over a semiconductor substrate;
• forming a film, said film comprising a material selected from the group consisting of TiN, titanium nitride containing oxygen atoms, and MoSix above said insulating layer;
• forming an electrode for a capacitive element by processing said film;
• forming a dielectric layer above said electrode for said capacitive element;
• and
• forming a second electrode for said capacitive element above said dielectric layer.

A method for manufacturing a semiconductor device comprising:

• forming a diffusion layer in a semiconductor substrate;
• forming an insulating layer over said diffusion layer;
• forming a first through-hole in said insulating layer located above said diffusion layer;
• forming a film above the insulating layer and in said through-hole, said film comprising a material selected from the group consisting of a TiN, titanium nitride containing oxygen atoms, and MoSix;
• forming an electrode for a capacitive element connected to said diffusion layer through said first through-hole by processing said film;
• forming a dielectric layer above said electrode for said capacitive element;
• forming a second electrode for said capacitive element above said dielectric layer;
• forming a second through-hole passing through said insulating layer above said diffusion layer;
• and
• forming an out-going electrode connected to said diffusion layer through said second through-hole.