Semiconductor thin film and thin film device

Abstract

A semiconductor thin film which is deposited by using a chemical vapor deposition method at an underlying layer temperature of 400° C. or less, and contains, as main component elements, a Group IV atom and hydrogen atom. A temperature dependency of an amount of release of hydrogen atoms within the film when the film is heated from room temperature exhibits a profile having a peak of the hydrogen releasing amount at 370° C. or higher and 410° C. or less, and a half-value width of the peak is 30° C. or less. Also disclosed is a thin film device having a semiconductor unit portion including this semiconductor thin film, and an electrode portion including an electrically conductive thin film, wherein these portions are formed on the same substrate.

Dependencies are inferred from the claim text.