Capacitor having tantalum oxynitride film and method for making same
AssigneeMicron Technology, Inc.
InventorsSCOTT JEFFREY DEBOER, HUSAM N. AL-SHAREEF, RANDHIR P.S. THAKUR, DAN GEALY
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Abstract
A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film.
Claims54
A method for fabricating a capacitor on an integrated circuit, comprising the steps of:
- forming a bottom plate electrode;
- forming a tantalum oxide film on the bottom plate electrode;
- annealing the tantalum oxide film in an environment containing oxygen;
- introducing nitrogen into the tantalum oxide film to form a tantalum oxynitride film;
- and
- forming a top plate electrode on the tantalum oxynitride film.
A method for fabricating a capacitor in an integrated circuit, comprising the steps of:
- forming a bottom plate electrode;
- forming a tantalum oxide film on the bottom plate electrode;
- annealing the tantalum oxide film in an environment containing oxygen;
- introducing nitrogen into the tantalum oxide film to form a tantalum oxynitride film;
- forming a top plate electrode on the tantalum oxynitride film;
- and
- wherein the step of introducing nitrogen comprises the step of annealing the tantalum oxide film in a nitrogen atmosphere at a temperature range between approximately 25 and 1100 degrees Celsius.
A method for fabricating a capacitor in an integrated circuit, comprising the <steps of:
- forming a bottom plate electrode;
- forming a tantalum oxide film on the bottom plate electrode;
- annealing the tantalum oxide film in an environment containing oxygen;
- introducing nitrogen into the tantalum oxide film to form a tantalum oxynitride film;
- forming a top plate electrode on the tantalum oxynitride film;
- and
- wherein the step of introducing nitrogen comprises the step of annealing in a furnace having an ammonia atmosphere at a temperature range between approximately 500 and 1050 degrees Celsius, and at a pressure less than 5 torr, for approximately five minutes.
A method for fabricating a capacitor in an integrated circuit, comprising the steps of:
- forming a bottom plate electrode;
- forming a tantalum oxide film on the bottom plate electrode;
- annealing the tantalum oxide film in an environment containing oxygen;
- introducing nitrogen into the tantalum oxide film to form a tantalum oxynitride film;
- forming a top plate electrode on the tantalum oxynitride film;
- and
- wherein the step of introducing nitrogen comprises the step of rapid thermal processing in a nitrogen atmosphere at a temperature between approximately 700 and 1050 degrees Celsius for a time between approximately 10 and 120 seconds.
A method for fabricating a capacitor, comprising the steps of:
- forming a bottom plate electrode;
- forming a tantalum oxynitride film on the bottom plate electrode;
- and
- forming a top plate electrode on the tantalum oxynitride film.
A method of fabricating a capacitor in an integrated circuit, comprising the steps of:
- forming a bottom plate electrode;
- forming a tantalum oxide film on the bottom plate electrode;
- annealing the tantalum oxide film in an environment containing oxygen;
- introducing nitrogen into the tantalum oxide film to form a tantalum oxynitride film;
- forming a top plate electrode on the tantalum oxynitride film;
- and
- wherein the step of introducing nitrogen comprises the step of annealing in a nitrogen atmosphere and a plasma.
The method of claim 31 wherein the step of annealing comprises the step of annealing in a nitrogen atmosphere that is one of a group consisting of:
- N2O, NH3, NO, and N2H4.
A capacitor, comprising:
- a bottom plate electrode;
- a tantalum oxynitride film on the bottom plate electrode;
- and
- a top plate electrode on the tantalum oxynitride film.
A memory, comprising:
- a memory array having a plurality of capacitors, each capacitor comprising,
- a bottom plate electrode,
- a tantalum oxynitride film on the bottom plate electrode, and
- a top plate electrode on the tantalum oxynitride film;
- a control circuit, operatively coupled to the memory array;
- and
- address logic, operatively coupled to the memory array and the control logic.
A system, comprising:
- a memory including,
- a memory array having a plurality of capacitors, each capacitor comprising,
- a bottom plate electrode,
- a tantalum oxynitride film on the bottom plate electrode, and
- a top plate electrode on the tantalum oxynitride film,
- a control circuit, operatively coupled to the memory array, and
- address logic, operatively coupled to the memory array and the control logic;
- and
- a processor coupled to the memory.
A method of operating an antifuse, comprising the steps of:
- applying a voltage across the electrodes of a capacitor having a tantalum oxynitride film;
- forming a hole in the tantalum oxynitride film;
- creating a resistance between approximately 1000 and 6000 ohms.
A method of forming an antifuse, comprising the steps of:
- forming a bottom plate electrode;
- forming a tantalum oxide film on the bottom plate electrode;
- annealing the tantalum oxide film in an environment containing oxygen;
- introducing nitrogen into the tantalum oxide film to form a tantalum oxynitride film;
- and
- forming a top plate electrode on the tantalum oxynitride film.
Dependencies are inferred from the claim text.