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US 2001/0010976 A1Published application
Method and system for reducing ARC layer removal bamd providing a capping layer for the ARC layer
AssigneeAdvanced Micro Devices, Inc.
InventorMarina V. Plat
Life of this patent
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Abstract
A method and system for providing a semiconductor device is disclosed. The method and system include depositing an antireflective coating (ARC) layer having antireflective properties. The method and system also include depositing a capping layer on the ARC layer. The capping layer reduces a susceptibility of the ARC layer to removal while allowing the ARC layer to substantially retain the antireflective properties.
Claims15
A method providing a semiconductor device comprising the steps of:
- (a) providing an antireflective coating (ARC) layer having antireflective properties, at least a portion of the ARC layer being on the first layer;
- and
- (b) providing a capping layer on the ARC layer, the capping layer reducing a susceptibility of the ARC layer to removal while allowing the ARC layer to substantially retain the antireflective properties.
A semiconductor device comprising:
- a plurality of memory cells;
- wherein the plurality of memory cells are defined using an antireflective coating (ARC) layer and a capping layer covering the ARC layer, the ARC layer having antireflective properties, the capping layer reducing a susceptibility of the ARC layer to removal while allowing the ARC layer to substantially retain the antireflective properties.
Dependencies are inferred from the claim text.