Electrically insulating resin composition and method for forming thin film therefrom
OwnerAkihiko Kobayashi, Katsutoshi Mine +2inventors
InventorsAkihiko Kobayashi, Katsutoshi Mine, Takashi Nakamura, Kiyotaka Sawa
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Abstract
An electrically insulating thin-film-forming resin composition comprising (A) an inorganic or organic electrically insulating resin having silicon atom-bonded hydrogen atoms, (B) a compound having groups able to react with the silicon atom-bonded hydrogen atoms in component (A) and having a boiling point under atmospheric pressure of at least 250° C., and (C) a solvent; and a method for forming an electrically insulating thin film therefrom.
Claims12
An electrically insulating thin-film-forming resin composition comprising (A) an inorganic or organic electrically insulating resin having silicon atom-bonded hydrogen atoms, (B) a compound having groups able to react with the silicon atom-bonded hydrogen atoms in component (A) and having a boiling point under atmospheric pressure of at least 250° C., and (C) a solvent.
A method for forming an electrically insulating thin film comprising coating the surface of an electronic device with an electrically insulating thin-film-forming resin composition comprising (A) an inorganic or organic electrically insulating resin having silicon atom-bonded hydrogen atoms, (B) a compound having groups able to react with the silicon atom-bonded hydrogen atoms in component (A) and having a boiling point under atmospheric pressure of at least 250° C., and (C) a solvent;
- evaporating all or part of the solvent, and crosslinking the composition by a method selected from the group consisting of heating and irradiation with high-energy rays.
Dependencies are inferred from the claim text.