Laser lift-off processing system including metal grid

A method of manufacturing a light emitting diode (LED) device, comprising:

• forming an LED structure by depositing a plurality of semiconductor layers on a transparent substrate;
• placing trenched metal in the plurality of semiconductor layers, with the trenched metal contacting the transparent substrate, wherein the trenched metal is arranged to define a trenched grid;
• attaching the LED structure to a complementary metal-oxide-semiconductor (CMOS) structure with electrical interconnects that define a cavity therebetween;
• coating a sidewall of the transparent substrate with an anti-stick material, wherein there is no anti-stick material in the cavity,
• then depositing an underfill material in the cavity, wherein the underfill material does not contact the sidewall of the transparent substrate;
• removing the underfill material from areas outside of the cavity;
• and
• directing laser light to provide laser lift-off of the transparent substrate from the plurality of semiconductor layers.