Semiconductor structure and method of making same

A semiconductor structure comprising:

• a first die comprising a first bonding structure, the first bonding structure comprising a first dielectric layer and first conductive pads in the first dielectric layer;
• a second die comprising a second bonding structure, the second bonding structure comprising a second dielectric layer and second conductive pads in the second dielectric layer;
• an interconnection die comprising a third bonding structure, the third bonding structure comprising a third dielectric layer and third conductive pads in the third dielectric layer;
• a first encapsulant, laterally encapsulating and in direct contact with the first dielectric layer and the second dielectric layer of the first die and the second die;
• and
• a second encapsulant, laterally encapsulating and in direct contact with the third dielectric layer of the interconnection die, wherein the first encapsulant is in direct contact with the second encapsulant.

A semiconductor structure comprising:

• a first die, comprising a first dielectric layer and first conductive patterns in the first dielectric layer;
• a second die, comprising a second dielectric layer and second conductive patterns in the second dielectric layer, wherein the first conductive patterns and the second conductive patterns are bonded through a solder-less bonding, to bond the first die and the second die;
• a first encapsulant, laterally encapsulating and interfacing with the first dielectric layer of the first die;
• and
• a second encapsulant, laterally encapsulating and interfacing with the second dielectric layer of the second die.