Semiconductor module

A semiconductor module comprising:

• a singular semiconductor switching element;
• and
• a plurality of stress application portions,
• wherein two or more of the stress application portions provided on a first surface and one of the stress application portions are provided on a second surface on an opposite side to the first surface of the semiconductor switching element, the stress application portions having a linear expansion coefficient larger than a linear expansion coefficient of a main material of the semiconductor switching element, the stress application portions having a larger thickness than the semiconductor switching element,
• wherein the stress application portions generate compressive stress or tensile stress in the semiconductor switching element through thermal shrinkage or thermal expansion of the stress application portions due to change in temperature, and
• wherein a threshold voltage at which the semiconductor switching element is turned on, decreases in association with increase of a magnitude of the compressive stress or the tensile stress in the semiconductor switching element,
• wherein the first surface is an upper surface of the semiconductor switching element and the second surface is a lower surface of the semiconductor switching element,
• wherein the two or more of the stress application portions are provided on the upper surface with one of the stress application portions at a first end and another one of the stress application portions provided at a second end of the upper surface and spaced, in a first direction parallel to the upper surface, from a first edge of the first end of the upper surface and a second edge of the second end of the upper surface,
• wherein only one of the application portions is provided on the lower surface,
• wherein the two or more of the stress application portions provided on the upper surface are disposed side by side in the first direction parallel to the upper surface.