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US 12,772,858 B2Granted
Semiconductor device with improved ESD performance, ESD reliability and substrate embedded powergrid approach
AssigneeSamsung Electronics Co., Ltd.
InventorsAruldas Divakaran, Subramanian Narasimhamoorthy, Mallikarjungouda S Patil
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Abstract
A semiconductor device includes a substrate, a plurality of metal rails embedded in the substrate, and a power grid embedded in the substrate, at least one of the plurality of metal rails being part of the power grid and being directly connected to the substrate to control an Electrostatic Discharge (ESD) in the semiconductor device.
Claims20
A semiconductor device, comprising:
- a substrate;
- an electrostatic discharge (ESD) device including a diode and configured to control an electrostatic discharge in the semiconductor device;
- a plurality of metal rails embedded within the substrate;
- and
- a power grid embedded within the substrate, at least one of the plurality of metal rails being part of the power grid and being directly connected to the ESD device,
- wherein the plurality of metal rails are buried in the substrate below a top surface of the substrate, and
- wherein the ESD device is disposed on and overlaps a buried portion of the power grid in a direction perpendicular to the top surface of the substrate.
4 more elements
A semiconductor device, comprising:
- a substrate;
- at least one Power Distribution Network (PDN) layer embedded within the substrate, the at least one PDN layer being a single layer and including a power line, a ground line, and a high-k dielectric part between the power line and the ground line;
- and
- a standard cell embedded within the substrate, the standard cell disposed on and overlapping a portion of the at least one PDN layer in a direction perpendicular to a top surface of the substrate,
- wherein the power line, the ground line, the high-k dielectric part, and the portions of the at least one PDN layer are embedded within the substrate to be surrounded by material of the substrate.
2 more elements
A semiconductor device, comprising:
- a substrate;
- at least one top Power Distribution Network (PDN) layer embedded within the substrate, the at least one top PDN layer including a first power line, a first ground line, and a first high-k dielectric part between the first power line and the first ground line;
- at least one bottom PDN layer embedded within the substrate, the at least one bottom PDN layer including a second power line, a second ground line, and a second high-k dielectric part between the second power line and the second ground line;
- and
- at least one standard cell embedded within the substrate, the at least one standard cell disposed on and overlapping a portion of the at least one top PDN layer in a direction perpendicular to a top surface of the substrate,
- wherein the first and second power lines, the first and second ground lines, and the portions of the at least one top PDN layer are embedded within the substrate to be surrounded by material of the substrate.
3 more elements
Dependencies are inferred from the claim text.