Method for forming a heat-sinked power semiconductor

Abstract

A method for forming a heat-sinked power semiconductor. The method includes: providing a power semiconductor having a power semiconductor die, a plurality of pin terminals and a plate terminal, the power semiconductor die having a plurality of semiconductor terminals, each of the pin terminals being electrically coupled to a corresponding one of the semiconductor terminals, the plate terminal being electrically coupled to one of the pin terminals, the plate terminal having an exterior surface that is covered with at least one sinter-resistant material; removing the at least one sinter-resistant material from the plate terminal to expose the exterior surface; heating a heat sink to a predetermined temperature; and sintering the heat sink to the exterior surface of the plate terminal.

Dependencies are inferred from the claim text.