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US 12,772,830 B2Granted
Semiconductor device with liner structure and method for fabricating the same
AssigneeNanya Technology Corporation
InventorKuo-Hui Su
Life of this patent
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Abstract
The present application discloses a semiconductor device including a substrate, a contact, a landing pad, a bit line, and an air gap. The contact is disposed over the substrate. The landing pad is disposed over the contact. The landing pad includes a plug, a first spacer, and a second spacer. The plug is disposed over and in contact with the contact. The first spacer is disposed over the plug. The second spacer is sandwiching a protruding portion of the plug. The bit line is disposed over the substrate. The air gap is disposed between the contact and the bit line.
Claims12
A semiconductor device, comprising:
- a substrate;
- an etch stop layer disposed over the substrate;
- a first lower plug and a second lower plug, disposed over the substrate and protruding from a top surface of the etch stop layer;
- a first upper plug and a second upper plug, disposed over the first lower plug and the second lower plug, respectively;
- an opening formed between the first upper plug and the second upper plug, wherein a portion of the top surface of the etch stop layer is exposed through the opening;
- an air gap disposed between the first upper plug and the second upper plug;
- and
- a liner structure disposed between the first upper plug and the second upper plug and within the opening, wherein the air gap is enclosed by the liner structure;
- wherein the liner structure has a top surface and a bottom surface in contact with the top surface of the etch stop layer;
- wherein the air gap is enclosed within the liner structure between the top surface and the bottom surface thereof;
- wherein a top surface of the first lower plug is rounded;
- wherein the first upper plug is in contact with a first sidewall of the first lower plug.
9 more elements
Dependencies are inferred from the claim text.