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US 12,772,807 B2Granted
Method of manufacturing a semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChieh-Hsin Hsieh, Wei-Han Lai, Ching-Yu Chang
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Abstract
A method of manufacturing a semiconductor device includes forming a first layer comprising an organic material over a substrate. A second layer is formed over the first layer, wherein the second layer includes a silicon-containing material and one or more selected from the group consisting of a photoacid generator, an actinic radiation absorbing additive including an iodine substituent, and a silicon-containing monomer having iodine or phenol group substituents. A photosensitive layer is formed over the second layer, and the photosensitive layer is patterned.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a first layer comprising an organic material over a substrate;
- forming a second layer over the first layer, wherein the second layer comprises a silicon-containing material and a silicon-containing monomer having iodine or phenol group substituents,
- wherein the forming the second layer comprises:
- applying a mixture comprising the silicon-containing material and the silicon-containing monomer containing over the first layer;
- and
- crosslinking the mixture by heating the mixture at a temperature ranging from 150° C. to 400° C. after applying the mixture over the first layer,
- wherein the applying the mixture comprises spin coating the mixture, and during the spin coating the silicon-containing monomer at least partially separates from the mixture forming an upper second layer and a lower second layer, wherein the upper second layer has a higher concentration of the silicon-containing monomer than the lower second layer;
- forming a photosensitive layer over the second layer;
- and
- patterning the photosensitive layer.
7 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a bottom anti-reflective coating layer over a substrate;
- forming a middle layer over the bottom anti-reflective coating layer, wherein the middle layer comprises a silicon-containing material and a silicon-containing monomer having iodine or phenol group substituents,
- wherein the silicon-containing monomer has a structure
- where Z and D are independently a substituted or unsubstituted C1-C20 alkyl group, C3-C20 cycloalkyl group, C1-C20 hydroxyalkyl group, C2-C20 alkoxy group, C3-C20 alkoxyalkyl group, C2-C20 acetyl group, C3-C20 acetyl alkyl group, C1-C20 carboxyl group, C2-C20 alkyl carboxyl group, C1-C20 alkyl fluoride group, C6-C20 aryl group, C7-C20 aralkyl group, or adamantyl group, wherein Z and D independently include 1-10 iodine or 1-10 phenolic OH groups, or Z is a single bond, or D is H;
- R4, R5, and R6 are respectively H or a substituted or unsubstituted C6-C20 aryl group, C7-C20 aralkyl group, C3-C20 cycloalkyl group, C1-C20 hydroxyalkyl group, C2-C20 alkoxy group, C3-C20 alkoxy alkyl group, C2-C20 acetyl group, C3-C20 acetyl alkyl group, C1-C20 carboxyl group, C2-C20 alkyl carboxyl group, or C4-C20 cycloalkyl carboxyl group;
- forming a photosensitive layer over the middle layer;
- selectively exposing the photosensitive layer to actinic radiation to form a latent pattern;
- and
- developing the selectively exposed photosensitive layer to form a pattern in the photosensitive layer.
6 more elements
A composition, comprising:
- a silicon-containing material and a silicon-containing monomer having iodine or phenol group substituents,
- the silicon-containing monomer has a structure
- where Z and D are independently a substituted or unsubstituted C1-C20 alkyl group, C3-C20 cycloalkyl group, C1-C20 hydroxyalkyl group, C2-C20 alkoxy group, C3-C20 alkoxyalkyl group, C2-C20 acetyl group, C3-C20 acetyl alkyl group, C1-C20 carboxyl group, C2-C20 alkyl carboxyl group, C1-C20 alkyl fluoride group, C6-C20 aryl group, C7-C20 aralkyl group, or adamantyl group, wherein Z and D independently include 1-10 iodine or 1-10 phenolic OH groups, or Z is a single bond, or D is H;
- R4, R5, and R6 are respectively H or a substituted or unsubstituted C6-C20 aryl group, C7-C20 aralkyl group, C3-C20 cycloalkyl group, C1-C20 hydroxyalkyl group, C2-C20 alkoxy group, C3-C20 alkoxy alkyl group, C2-C20 acetyl group, C3-C20 acetyl alkyl group, C1-C20 carboxyl group, C2-C20 alkyl carboxyl group, or C4-C20 cycloalkyl carboxyl group.
1 more element
Dependencies are inferred from the claim text.