Manufacturing method of semiconductor structure

Abstract

A manufacturing method of a semiconductor structure is provided. The method includes the following steps. A target layer and a hardmask layer are sequentially formed on a substrate. A part of the hardmask layer is removed to form a recess. A plurality of first patterns are formed on a top surface of the hardmask layer and a plurality of second patterns are formed in the recess simultaneously. A pattern density of the plurality of first patterns is smaller than that of the plurality of second patterns. The hardmask layer and the target layer are patterned using the first patterns and the second patterns as a mask to form a plurality of first target patterns corresponding to the plurality of first patterns and a plurality of second target patterns corresponding to the plurality of second patterns in the target layer. The first and second patterns and the hardmask layer are removed.

Dependencies are inferred from the claim text.