Method of manufacturing semiconductor structure

A method of manufacturing a semiconductor structure, comprising:

• providing a substrate with an active device layer on the substrate;
• forming a stack film layer on the active device layer;
• forming a resist platform layer on the stack film layer based on a hole pattern;
• depositing a blocking layer on the resist platform layer conformally;
• forming a photoresist layer on the blocking layer, wherein a top surface of the photoresist layer is higher than a topmost surface of the blocking layer, and wherein a second thickness measured from a top surface of the photoresist layer to a top surface of the blocking layer on the stack film layer is greater than a first thickness measured from the top surface of the photoresist layer to the top surface of the blocking layer on the resist platform layer;
• etching the photoresist layer until exposing a plurality of exposed top surfaces of the blocking layer based on the hole pattern to form a plurality of first openings, wherein the hole pattern is corresponding to an area of the plurality of first openings;
• and
• etching the blocking layer, the resist platform layer and the stack film layer until exposing a plurality of top surfaces of the active device layer based on the plurality of first openings to form a plurality of second openings.