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US 12,772,766 B2Granted
Substrate stress management using direct selective area processing
AssigneeApplied Materials, Inc.
InventorMorgan Evans
Life of this patent
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Abstract
A method may include providing a stress the substrate having a main surface, and forming a patterned stress compensation layer on the main surface, wherein the patterned stress compensation layer is formed by exposing the main surface to a processing beam while a movement of the ion beam with respect to the main surface takes place.
Claims8
A method of stress management in a substrate, comprising:
- providing a substrate having a main surface;
- and
- forming a patterned stress compensation layer on the main surface,
- wherein the patterned stress compensation layer is formed by exposing the main surface to a processing beam while a movement of the processing beam with respect to the main surface takes place,
- wherein the forming the patterned stress compensation layer comprises:
- providing the stress compensation layer as an uncovered stress compensation layer;
- and
- performing a selective area etching operation, wherein the uncovered stress compensation layer is selectively etched as a function of position across the main surface by exposing the uncovered stress compensation layer to the processing beam ion beam during the movement.
5 more elements
A method of stress management in a substrate, comprising:
- providing a substrate having a main surface;
- and
- forming a patterned stress compensation layer on the main surface,
- wherein the forming the patterned stress compensation layer comprises:
- depositing the stress compensation layer by condensing a species derived from a pulsed ion beam, wherein a duty cycle of the pulsed ion beam is varied as a function of position, while movement of the pulsed ion beam with respect to the main surface takes place, and
- the stress compensation layer has a non-uniform thickness as a function of position across the main surface.
3 more elements
A method of stress management in a substrate, comprising:
- providing a substrate having a main surface;
- and
- forming a patterned stress compensation layer on the main surface,
- wherein the patterned stress compensation layer is formed by exposing the main surface to a processing beam while a movement of the processing beam with respect to the main surface takes place,
- wherein the forming the patterned stress compensation layer comprises:
- providing a substrate having a stress compensation layer on the main surface;
- and
- performing a selective area damage operation, wherein the stress compensation layer is selectively damaged as a function of position across the main surface by scanning the processing beam in a non-uniform manner, and wherein the selective area damage causes at least one of:
- a reduction in crystalline order, and an amorphization of the stress compensation layer.
6 more elements
A method of stress management in a substrate, comprising:
- providing a substrate having a main surface;
- and
- forming a patterned stress compensation layer on the main surface,
- wherein the forming the patterned stress compensation layer comprises:
- depositing the stress compensation layer by condensing a species derived from an ion beam,
- wherein a relative scan rate of the ion beam with respect to the substrate is varied as a function of position, while movement of the ion beam with respect to the main surface takes place, and
- wherein the stress compensation layer has a non-uniform thickness as a function of position across the main surface.
4 more elements
Dependencies are inferred from the claim text.