Deposition of flowable SiCN films by plasma enhanced atomic layer deposition

A method for flowable gap-fill deposition, the method comprising:

• (a) placing a substrate in a first station of a plurality of stations comprising the first station, a second station, a third station, and a fourth station, the first station comprising an upper chamber and a lower chamber, wherein the lower chamber comprises a shared intermediate space between the plurality of stations;
• (b) contacting the substrate in the first station with a precursor at a first temperature, wherein the precursor is 1,1,3,3-tetramethyl-1,3-divinyldisilazane or 1,3-divinyl-1,1,3,3-tetramethyldisilazane, wherein contacting with the precursor forms a first flowable film layer within a gap of the substrate;
• (c) after contacting the substrate in the first station with the precursor, placing the substrate in the second station;
• (d) performing a first thermal and ultraviolet treatment on the substrate by heating the substrate to a second temperature in the second station and exposing the substrate to ultraviolet light;
• (e) after performing the first thermal and ultraviolet treatment on the substrate, placing the substrate in the third station;
• (f) contacting the substrate in the third station with the precursor at the first temperature, wherein contacting with the precursor forms a second flowable film layer within the gap;
• (g) after contacting the substrate in the third station with the precursor, placing the substrate in the fourth station;
• (h) performing a second thermal and ultraviolet treatment on the substrate by heating the substrate to the second temperature in the fourth station and exposing the substrate to ultraviolet light;
• and
• repeating (a)-(h) in a cycle until a film of desired thickness is deposited on the substrate,
• wherein the second temperature is different from the first temperature.