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US 12,772,759 B2Granted
Thin film deposition method
AssigneeJusung Engineering Co., Ltd.
InventorsYoon Jeong Kim, Jung Kyun Lee, Chul Joo Hwang
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Abstract
The present disclosure relates to a method for depositing a thin film, and more particularly, to a method for depositing a thin film, which forms a gate insulation film on a silicon carbide substrate. In accordance with an exemplary embodiment, a method for depositing a thin film includes: preparing a silicon carbide substrate having a plurality of semiconductor regions; and forming a gate insulation film on the silicon carbide substrate at a temperature of 100° C. to 400° C. through an atomic layer deposition process.
Claims8
A method for depositing a thin film, comprising:
- preparing a silicon carbide substrate having a plurality of semiconductor regions;
- and
- forming a gate insulation film on the silicon carbide substrate at a temperature of 100° C. to 400° C. through an atomic layer deposition process;
- wherein the forming of the gate insulation film comprises:
- supplying a source gas onto the silicon carbide substrate;
- performing a plasma pre-treatment on the silicon carbide substrate;
- supplying a reactant gas onto the silicon carbide substrate;
- and
- performing a plasma post-treatment on the silicon carbide substrate,
- wherein a process cycle comprising the supplying of the source gas, the performing of the plasma pre-treatment, the supplying of the reactant gas, and the performing of the plasma post-treatment is performed a plurality of times,
- wherein the performing of the plasma pre-treatment and the performing of the plasma post-treatment comprise:
- injecting a hydrogen gas onto the silicon carbide substrate;
- and
- discharging the hydrogen gas and generating plasma on the silicon carbide substrate.
11 more elements
Dependencies are inferred from the claim text.