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US 12,772,757 B2Granted
Substrate processing method
AssigneeASM IP Holding B.V.
InventorsSangHeon Yong, HongSuk Kim, SungHa Choi, JuHyuk Park, KiHun Kim, JiHye Yang
Life of this patent
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Abstract
A substrate processing method includes providing, in a reaction space, a substrate including two gaps in a surface thereof, and filling the at least two gaps with a flowable film under a pulsed plasma atmosphere, while supplying a precursor and a reactant gas to the reaction space, wherein a difference of filling heights of the flowable film filled in the at least two gaps, between the at least two gaps, is reduced by adjusting a pulse frequency of pulsed plasma.
Claims24
A substrate processing method comprising:
- providing, in a reaction space, a substrate having a surface on which a first gap and a second gap are formed, wherein the first gap has a first cross-sectional diameter in a horizontal direction, and the second gap has a second cross-sectional diameter greater than the first cross-sectional diameter, in the horizontal direction;
- and
- filling the first gap and the second gap with a flowable film under a pulsed plasma atmosphere, while supplying a precursor and a reactant gas to the reaction space,
- wherein the filling comprises:
- setting a reference pulse frequency that is an arbitrary reference of pulsed plasma;
- and
- filling the first gap and the second gap with the flowable film while supplying the pulsed plasma with an execution pulse frequency smaller than the reference pulse frequency,
- wherein, by performing the filling while supplying the pulsed plasma with the execution pulse frequency smaller than the reference pulse frequency, a filling height increase rate of the flowable film in the first gap relatively increases and at the same time, a filling height increase rate of the flowable film in the second gap relatively decreases so that a height difference between a filling height of the flowable film filled in the first gap and a filling height of the flowable film filled in the second gap is decreased relative to a height difference of another flowable film deposited using the reference pulse frequency.
5 more elements
A substrate processing method comprising:
- providing, in a reaction space, a substrate including at least two gaps in a surface thereof;
- filling the at least two gaps with a flowable film under a pulsed plasma atmosphere, while supplying a precursor and a reactant gas to the reaction space, and
- adjusting a pulse frequency of pulsed plasma,
- wherein the adjusting of the pulse frequency of the pulsed plasma comprises:
- setting a reference pulse frequency that is an arbitrary reference of the pulsed plasma;
- and
- setting an execution pulse frequency smaller than the reference pulse frequency, and
- wherein the difference of the filling heights of the flowable film filled in the at least two gaps, between the at least two gaps, is reduced, relative to a height difference of another flowable film deposited using the reference pulse frequency, while supplying the pulsed plasma with the execution pulse frequency.
5 more elements
A substrate processing method comprising:
- providing, in a reaction space, a substrate including at least two gaps in a surface thereof;
- and
- filling the at least two gaps with a flowable film under a pulsed plasma atmosphere, while supplying a precursor and a reactant gas to the reaction space,
- wherein a difference of filling heights of the flowable film filled in the at least two gaps, between the at least two gaps, is reduced, relative to a height difference of another flowable film deposited using the reference pulse frequency, by adjusting a pulse frequency of pulsed plasma, wherein the adjusting of the pulse frequency of the pulsed plasma comprises:
- setting a reference pulse frequency that is an arbitrary reference of the pulsed plasma;
- and
- setting an execution pulse frequency smaller than the reference pulse frequency,
- wherein a difference of filling speeds of the flowable film filled in the at least two gaps, between the at least two gaps, is reduced while supplying the pulsed plasma with the execution pulse frequency.
5 more elements
Dependencies are inferred from the claim text.