Contact layer formation with microwave annealing for NMOS devices
AssigneeApplied Materials, Inc.
InventorsNicolas Louis Breil, Wolfgang R. Aderhold, Shashank Sharma, Nilay Anil Pradhan
Life of this patent
Estimating the term…
Abstract
A method of forming an electrical contact in semiconductor structure includes performing a selective deposition process on a semiconductor structure having a semiconductor region and a dielectric layer having a trench therewithin, the selective deposition process comprising epitaxially forming a contact layer on the semiconductor region within the trench of the dielectric layer, and performing a microwave anneal process to activate dopants in the epitaxially formed contact layer.
Claims20
A method of forming an electrical contact in a semiconductor structure, comprising:
- performing a cavity shaping process to form a cavity on an exposed surface of a semiconductor region within a trench of a dielectric layer;
- performing a selective deposition process comprising epitaxially forming a contact layer on the semiconductor region within the trench of the dielectric layer;
- and
- performing a microwave anneal process to activate dopants in the epitaxially formed contact layer.
A method of forming an electrical contact in a semiconductor structure, comprising:
- performing a pre-clean process on a semiconductor structure having a semiconductor region and a dielectric layer having a trench therewithin, the pre-clean process comprising removing contaminants formed on an exposed surface of the semiconductor region within the trench;
- performing a cavity shaping process to form a cavity on the exposed surface of the semiconductor region within the trench;
- performing a selective deposition process, the selective deposition process comprising epitaxially forming a contact layer in the cavity in the semiconductor region within the trench of the dielectric layer;
- and
- performing a microwave anneal process to activate dopants in the epitaxially formed contact layer.
A processing system, comprising:
- a first processing chamber;
- a second processing chamber;
- a third processing chamber;
- and
- a system controller configured to cause the processing system to:
- perform, in the first processing chamber, a cavity shaping process to form a cavity on an exposed surface of a semiconductor region within a trench of a dielectric layer;
- perform, in the second processing chamber, a selective deposition process comprising epitaxially forming a contact layer on the semiconductor region within the trench of the dielectric layer;
- and
- perform, in the second third processing chamber, a microwave anneal process to activate dopants in the epitaxially formed contact layer.
Dependencies are inferred from the claim text.