Templating layers for growth of perpendicularly magnetized heusler films

A method of forming a magnetic memory device, the method comprising:

• forming a seed layer above a substrate;
• forming a chemical templating layer above the seed layer, the chemical templating layer comprising a binary alloy having a Cu3Au prototype structure or a BiF3 prototype structure;
• and
• growing a first magnetic layer above the chemical templating layer, wherein the Cu3Au prototype structure or a BiF3 prototype structure of the chemical templating layer causes the first magnetic layer to comprise a Heusler compound having perpendicular magnetic anisotropy.