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US 12,772,745 B2Granted
Spin logic device having enhanced data retention
AssigneeIndustry-Academic Cooperation Foundation, Yonsei University
InventorsJongill Hong, Min Hyuk Park, Taehui Na
Life of this patent
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Abstract
A spin logic device includes: a first conductive layer formed of a nonmagnetic conductive material and having one end receiving first current as an input; a ferromagnetic layer having magnetic anisotropy and having one end opposing the other end of the first conductive layer; and an antiferroelectric layer disposed between the other end of the first conductive layer and the one end of the ferromagnetic layer. A magnetization direction of the ferromagnetic layer may be determined based on a current direction of the first current of the first conductive layer.
Claims13
A spin logic device comprising:
- a first conductive layer formed of a nonmagnetic conductive material and having one end receiving a first current as an input;
- a ferromagnetic layer having magnetic anisotropy and having one end opposing another end of the first conductive layer;
- and
- an antiferroelectric layer between the other end of the first conductive layer and the one end of the ferromagnetic layer,
- wherein
- a magnetization direction of the ferromagnetic layer is determined based on a current direction of the first current of the first conductive layer,
- in an active mode where the first current is applied, the ferromagnetic layer reverses magnetization by a first magnetic field of the first current due to a first coercive force, and
- in a standby mode where the first current is not applied, the ferromagnetic layer does not undergo magnetization reversal by a second magnetic field due to an external noise current due to a second coercive force,
- in the standby mode in which the first current is absent, the second magnetic field induced by the external noise current does not exceed the second coercive force of the ferromagnetic layer without an application of a first voltage between the first conductive layer and the ferromagnetic layer, such that the ferromagnetic layer does not undergo the magnetization reversal, and
- in the active mode where the first current is applied, the first magnetic field generated by the first current exceeds the first coercive force of the ferromagnetic layer reduced by application of a second voltage between the first conductive layer and the ferromagnetic layer, and thereby causes magnetization reversal of the ferromagnetic layer.
7 more elements
A spin logic device, comprising:
- a first conductive layer formed of a nonmagnetic conductive material and having one end receiving a first current as an input;
- a ferromagnetic layer having magnetic anisotropy and having one end opposing another end of the first conductive layer;
- and
- an antiferroelectric layer between the other end of the first conductive layer and the one end of the ferromagnetic layer, wherein
- a magnetization direction of the ferromagnetic layer is determined based on a current direction of the first current of the first conductive layer,
- the antiferroelectric layer has a voltage-dependent current hysteresis loop with a first peak in a first quadrant, and a second peak in the first quadrant and a second quadrant, and
- the voltage-dependent current hysteresis loop has a third peak in a third quadrant, and a fourth peak at a boundary between the third quadrant and a fourth quadrant of the voltage-dependent current hysteresis loop.
4 more elements
A spin logic device, comprising:
- a first conductive layer formed of a nonmagnetic conductive material and having one end receiving a first current as an input;
- a ferromagnetic layer having magnetic anisotropy and having one end opposing another end of the first conductive layer;
- and
- an antiferroelectric layer between the other end of the first conductive layer and the one end of the ferromagnetic layer, wherein
- a magnetization direction of the ferromagnetic layer is determined based on a current direction of the first current of the first conductive layer, and
- a slope of a coercive force of the ferromagnetic layer to a potential difference of a potential of the ferromagnetic layer to a potential of the first conductive layer is −363 Oe/V or negatively more.
3 more elements
Dependencies are inferred from the claim text.