Display systems with light-emitting diodes

An electronic device comprising:

• a first n-type semiconductor layer;
• a first p-type semiconductor layer that overlaps a first portion of the first n-type semiconductor layer;
• a multi-quantum wells layer of a first color that is interposed between the first n-type semiconductor layer and the first p-type semiconductor layer;
• a multi-quantum wells layer of a second color that is different than the first color having a first portion that is interposed between the first portion of the first n-type semiconductor layer and the first p-type semiconductor layer;
• and
• a second p-type semiconductor layer that overlaps a second portion of the first n-type semiconductor layer, wherein the multi-quantum wells layer of the second color has a second portion that is interposed between the second portion of the first n-type semiconductor layer and the second p-type semiconductor layer, wherein the first n-type semiconductor layer, the first p-type semiconductor layer, and the multi-quantum wells layer of the first color define a first light-emitting diode of the first color, and wherein the first n-type semiconductor layer, the second p-type semiconductor layer, and the second portion of the multi-quantum wells layer of the second color define a second light-emitting diode of the second color.

An electronic device comprising a light-emitting diode array with a plurality of pixels, wherein each pixel comprises:

• a blue light-emitting diode comprising a first n-type semiconductor layer, a first p-type semiconductor layer, and a blue multi-quantum wells layer interposed between the first n-type semiconductor layer and the first p-type semiconductor layer;
• a green light-emitting diode comprising a second n-type semiconductor layer, a second p-type semiconductor layer, and a green multi-quantum wells layer interposed between the second n-type semiconductor layer and the second p-type semiconductor layer;
• a red light-emitting diode comprising a third n-type semiconductor layer, a third p-type semiconductor layer, and a red multi-quantum wells layer interposed between the third n-type semiconductor layer and the third p-type semiconductor layer, wherein the blue, red, and green light-emitting diodes are vertically stacked;
• and
• a first conductive contact that provides signals to the first p-type semiconductor layer, the second p-type semiconductor layer, and the third p-type semiconductor layer.