LED array for in-plane optical interconnects
AssigneeAvicenaTech, Corp.
InventorsMichael Krames, Bardia Pezeshki, Robert Kalman, Cameron Danesh
Life of this patent
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Abstract
An LED array on a sapphire substrate may be mounted on a silicon interconnect chip, with LEDs of the array inserted into holes of waveguides on the silicon interconnect chip. The sapphire substrate and the silicon interconnect chip may both have microbumps for carrying electrical signals to or from the LEDs, and the sapphire substrate and silicon interconnect chip may be bonded together using the microbumps. The LEDs may be configured to preferentially emit light in a lateral direction, for increased coupling of light into the waveguides.
Claims4
A light emitting device, comprising:
- a silicon nitride (SiN) waveguide having an insertion hole about a longitudinal end of the waveguide, with a reflective metallization capping the longitudinal end of the waveguide;
- a light emitting diode, on a first substrate, comprising:
- a Gallium nitride (GaN) n-type layer,
- a GaN p-type layer,
- a GaN active layer, between the GaN n-type layer and the GaN p-type layer, comprising at least one quantum well layer containing In,
- a reflective layer on the GaN p-type layer, the reflective layer being more distal from the first substrate than the GaN p-type layer,
- wherein the distance in terms of full wave optical thickness (FWOT) between the at least one quantum well layer and the reflective layer is chosen so that light generated from the GaN active layer is preferentially emitted into lateral modes away from a surface normal to the GaN active layer, with the distance in terms of FWOT being about 0.4;
- wherein the GaN active layer is positioned within the insertion hole of the waveguide to allow for light from the GaN active layer to be efficiently coupled into the waveguide;
- wherein the reflective layer is a metal;
- and
- wherein the reflective layer is a p-side contact for the GaN p-type layer.
Dependencies are inferred from the claim text.