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US 12,772,579 B1Granted
Curved semiconductor and method of forming the same
AssigneeHRL Laboratories, LLC
InventorsAndrew C. Keefe, Geoffrey P. McKnight, Alexander R. Gurga, Ryan Freeman
Life of this patent
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Abstract
A method of forming a curved semiconductor includes: forming a device layer on a semiconductor substrate; forming a metal layer on the device layer; removing the semiconductor substrate from the device layer; and curving the device layer and the metal layer.
Claims19
A method of forming a curved semiconductor, the method comprising:
- first, providing a semiconductor substrate comprising an oxide layer;
- second, forming a device layer on the oxide layer on the semiconductor substrate, the device layer comprising a semiconductor material and metal traces;
- third, forming a metal layer on the device layer;
- fourth, removing the semiconductor substrate from the device layer and the oxide layer;
- and
- fifth, simultaneously curving the device layer and the metal layer such that the metal layer is plastically deformed to maintain the device layer in the curved state.
3 more elements
A method of forming a curved semiconductor, the method comprising:
- first, mounting a first surface of a device layer onto a handle, the device layer comprising a semiconductor material and metal traces, a semiconductor substrate being on a second surface of the device layer;
- second, removing the semiconductor substrate from the second surface of the device layer to expose the second surface of the device layer;
- third, forming a metal layer on the exposed second surface of the device layer;
- and
- fourth, simultaneously curving the device layer and the metal layer such that the metal layer is plastically deformed to maintain the device layer in the curved state.
2 more elements
Dependencies are inferred from the claim text.