Interface preparation for tandem photovoltaic devices
AssigneeFirst Solar, Inc.
InventorsJames Becker, Vinodh Chandrasekaran, Casimir Kotarba, Andrei Los, Jialiu Ma
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Abstract
Ways of making and using tandem photovoltaic devices are provided, where such devices can include a first submodule, a second submodule, and an interface between the first submodule and the second submodule. The interface permits a portion of light to pass therethrough and optically couples the first submodule and the second submodule. Optically coupling the first submodule and the second submodule includes reducing reflection of the portion of light passing through the interface.
Claims19
A tandem photovoltaic device comprising:
- a first submodule,
- a second submodule over the first submodule, and
- an interface between the first submodule and the second submodule, wherein:
- the interface permits a portion of light to pass therethrough,
- the interface optically couples the first submodule and the second submodule, and the interface comprises:
- an absorber layer formed from a thin film semiconductor, the absorber layer having a surface having a roughness with a root mean square average from 50 nanometers to 200 nanometers;
- a conductive layer over the surface of the absorber layer;
- and
- a transparent coating layer over the conductive layer, the transparent coating layer including a back surface having a surface roughness less than the roughness of the absorber surface, and wherein the transparent coating layer is between the absorber layer and the second submodule;
- whereby the interface transmits at least 60% of light having a wavelength from about 800 nm to about 1200 nm therethrough.
A tandem photovoltaic device comprising:
- a first submodule;
- a second submodule over the first submodule, and an interface between the first submodule and the second submodule, wherein:
- the interface permits a portion of light to pass therethrough,
- the interface optically couples the first submodule and the second submodule, and the interface comprises:
- an absorber layer formed from a thin film semiconductor, the absorber layer having a surface having a roughness with a root mean square average in a range of 150 nanometers to 200 nanometers;
- a conductive layer over the surface of the absorber layer, wherein the conductive layer has an index of refraction mismatch of at least 0.75 to the absorber layer;
- and
- a transparent coating layer over the conductive layer, the transparent coating layer including a back surface having a surface roughness less than the roughness of the absorber surface, and wherein the transparent coating layer is in direct contact with the conductive layer, and wherein the transparent coating layer is between the absorber layer and the second submodule.
Dependencies are inferred from the claim text.