US 12,772,571 B2 · Semiconductor device

Abstract

A semiconductor device includes a substrate doped with first conductivity-type impurities, a first well doped with second conductivity-type impurities different from the first conductivity-type impurities, first active regions in the first well, the first active regions being doped with the first conductivity-type impurities and connected to a first pad through a first interconnection, second active regions outside the first well, the second active regions being doped with the second conductivity-type impurities and connected to a second pad through a second interconnection, third active regions around the first active regions in the first well and doped with the second conductivity-type impurities, and fourth active regions around the second active regions outside the first well and doped with the first conductivity-type impurities, wherein at least one of the third active regions and at least one of the fourth active regions are electrically connected to each other through a third interconnection.

Claims20

Dependent claims

A semiconductor device, comprising:

a substrate doped with first conductivity-type impurities;
a first well region in the substrate and doped with second conductivity-type impurities, the second conductivity-type impurities being different from the first conductivity-type impurities;
first active regions in the first well region, the first active regions being doped with the first conductivity-type impurities, and being connected to a first pad through a first interconnection pattern;
second active regions outside of the first well region in the substrate, the second active regions being doped with the second conductivity-type impurities, and being respectively connected to a second pad through a second interconnection pattern;
third active regions around the first active regions in the first well region and doped with the second conductivity-type impurities;
and
fourth active regions around the second active regions outside the first well region and doped with the first conductivity-type impurities,
wherein at least one of the third active regions and at least one of the fourth active regions are electrically connected to each other through a third interconnection pattern.

5 more elements

A semiconductor device, comprising:

a substrate doped with first conductivity-type impurities;
a first well region and a second well region in the substrate and doped with second conductivity-type impurities, the second conductivity-type impurities being different from the first conductivity-type impurities;
first active regions in the first well region, the first active regions being doped with the first conductivity-type impurities, and being respectively connected to a first pad through a first interconnection pattern;
second active regions in the second well region, the second active regions being doped with the second conductivity-type impurities, and being connected to a second pad through a second interconnection pattern;
third active regions around the first active regions in the first well region and doped with the second conductivity-type impurities;
fourth active regions between the first well region and the second well region in the substrate and doped with the first conductivity-type impurities;
fifth active regions between the first well region and the second well region in the substrate and doped with the second conductivity-type impurities;
and
sixth active regions around the second active regions in the second well region and doped with the first conductivity-type impurities,
wherein at least one of the third active regions and at least one of the fourth active regions are electrically connected to each other through a third interconnection pattern, and
wherein at least one of the fifth active regions and at least one of the sixth active regions are electrically connected to each other through a fourth interconnection pattern.

8 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims20