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US 12,772,543 B2Granted
Stacked devices containing at least one lateral diode
AssigneeInternational Business Machines Corporation
InventorsTerence Hook, Junli Wang, Chen Zhang, Anthony I. Chou
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Abstract
A semiconductor structure is provided including stacked first and second devices wherein at least one of the stacked devices includes a lateral diode. The lateral diode includes a p-doped region as an anode, an n-doped region as a cathode and a semiconductor channel material region sandwiched between the anode and the cathode.
Claims20
A semiconductor structure comprising:
- a first device comprising a first pair of doped regions separated by a first semiconductor channel material region, and a second device located above the first device and comprising a second pair of doped regions separated by a second semiconductor channel material region, wherein the first pair of doped regions are coplanar with each other and the second pair of doped regions are coplanar with each other, and at least one of the first pair of doped regions and the second pair of doped regions comprises an n-doped region and a p-doped region, and wherein the p-doped region functions as an anode of a lateral diode, and the n-doped region functions as a cathode of the lateral diode;
- a dielectric material layer vertically separating, and electrically insulating, the first pair of doped regions from the second pair of doped regions;
- and
- a gate structure comprising a gate dielectric layer and a gate electrode located between the first semiconductor channel material region and the second semiconductor channel material region and laterally adjacent to the dielectric material layer, wherein gate dielectric layer contacts the first semiconductor channel material region and the gate electrode contacts the second semiconductor channel material region.
1 more element
A semiconductor structure comprising:
- a first device comprising a first pair of doped regions separated by a first semiconductor channel material region, and a second device located above the first device and comprising a second pair of doped regions separated by a second semiconductor channel material region, wherein the first pair of doped regions are coplanar with each other and the second pair of doped regions are coplanar with each other, and at least one of the first pair of doped regions and the second pair of doped regions comprises an n-doped region and a p-doped region, and wherein the p-doped region functions as an anode of a lateral diode, and the n-doped region functions as a cathode of the lateral diode, wherein the second pair of doped regions comprises the n-doped region and the p-doped region, and the first pair of doped regions are source/drain regions that comprise a same conductivity type dopant.
A semiconductor structure comprising:
- a first device comprising a first pair of doped regions separated by a first semiconductor channel material region, and a second device located above the first device and comprising a second pair of doped regions separated by a second semiconductor channel material region, wherein the first pair of doped regions are coplanar with each other and the second pair of doped regions are coplanar with each other, and at least one of the first pair of doped regions and the second pair of doped regions comprises an n-doped region and a p-doped region, and wherein the p-doped region functions as an anode of a lateral diode, and the n-doped region functions as a cathode of the lateral diode, wherein the first device and the second device are located in a diode region of a semiconductor substrate.
Dependencies are inferred from the claim text.