Method of singulation of dies from a wafer

A method of singulation of dies from a wafer, wherein the wafer has a backside, a topside and comprises a semiconductor layer and a coating applied to the backside of the wafer after backgrinding, wherein the coating comprises at least one metallization layer, wherein the dies are separated along saw streets running in multiple directions, wherein the method comprises the steps of:

• applying a layer of photoresist as an etch mask on the topside of the wafer for the step of etching the wafer in accordance with the etch mask;
• dicing the wafer along the saw streets from the topside of the wafer;
• wherein the dicing is performed through plasma dicing for a dicing depth corresponding to the interface between the semiconductor layer and the coating, and wherein the layer of photoresist is applied prior to the step of dicing, wherein the method further comprises the step of:
• etching the wafer in accordance with an etch mask corresponding to the saw streets, for each of the remaining metallization layers in the coating, for singulating the dies from the wafer.