Back to results
US 12,772,538 B2Granted
Three-dimensinal semiconductor memory device and method of manufacturing the same
AssigneeKioxia Corporation
InventorsTakayuki Beppu, Hiroko Tahara, Masayuki Kitamura, Hiroshi Toyoda, Hiroyuki Ohtori
Life of this patent
Estimating the term…
Abstract
In one embodiment, a semiconductor device includes a first layer including a metal element. The device further includes a first insulator that is in contact with the first layer and includes silicon and oxygen. The device further includes a second layer that is in contact with the first insulator and includes molybdenum or tungsten.
Claims16
A semiconductor device comprising:
- a stacked film including a plurality of electrode layers and a plurality of insulators that are alternately provided in a first direction;
- and
- a second insulator provided in direct contact with the stacked film in the stacked film;
- a charge storing layer provided on a side face of the second insulator in the stacked film;
- a third insulator provided on a side face of the storing layer in the stacked film;
- and
- a semiconductor layer provided on a side face of the third insulator in the stacked film,
- wherein at least one of the plurality of electrode layers includes:
- a first layer that is provided on a side face of the second insulator via a fourth insulator included in the stacked film, and includes a metal element, the fourth insulator being in direct contact with the second insulator, the first layer being in direct contact with the fourth insulator;
- a first insulator that is in contact with the first layer and includes silicon and oxygen;
- and
- a second layer that is in contact with the first insulator and includes molybdenum or tungsten.
9 more elements
A semiconductor device comprising:
- a stacked film including a plurality of electrode layers and a plurality of insulators that are alternately provided in a first direction;
- and
- a second insulator provided in direct contact with the stacked film in the stacked film;
- a charge storing layer provided on a side face of the second insulator in the stacked film;
- a third insulator provided on a side face of the storing layer in the stacked film;
- and
- a semiconductor layer provided on a side face of the third insulator in the stacked film,
- wherein at least one of the plurality of electrode layers includes:
- a first layer that is provided on a side face of the second insulator via a fourth insulator included in the stacked film, and includes a first metal element, the fourth insulator being in direct contact with the second insulator, the first layer being in direct contact with the fourth insulator;
- a first insulator that is in contact with the first layer and includes silicon and oxygen;
- and
- a second layer that is in contact with the first insulator and includes a second metal element.
9 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a stacked film including a plurality of fourth layers and a plurality of insulators that are alternately provided in a first direction;
- and
- forming a second insulator in direct contact with the stacked film in the stacked film;
- forming a charge storing layer on a side face of the second insulator in the stacked film;
- forming a third insulator on a side face of the storing layer in the stacked film;
- forming a semiconductor layer on a side face of the third insulator in the stacked film;
- removing the plurality of fourth layers from the stacked film after the semiconductor layer is formed;
- and
- forming a plurality of electrode layers in a plurality of recesses formed in the stacked film by the removal of the plurality of fourth layers,
- wherein at least one of the plurality of electrode layers is formed by:
- forming a first layer that is provided on a side face of the second insulator via a fourth insulator included in the stacked film, and includes a metal element, the fourth insulator being in direct contact with the second insulator, the first layer being in direct contact with the fourth insulator;
- forming a first film that is in contact with the first layer and includes silicon;
- changing the first film into a first insulator that is in contact with the first layer and includes silicon and oxygen, and a second film that is in contact with the first insulator and includes molybdenum or tungsten;
- and
- forming a third film that is in contact with the second film and includes molybdenum or tungsten, thereby forming a second layer including the second film and the third film.
12 more elements
Dependencies are inferred from the claim text.