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US 12,772,501 B2Granted
Power device having oxide semiconductor layer with a large band gap and field effect mobility
AssigneeFlosfia Inc.
InventorsMasahiro Sugimoto, Yasushi Higuchi
Life of this patent
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Abstract
A semiconductor device including at least a crystalline oxide semiconductor layer, which has a band gap of 3 eV or more and a field-effect mobility of 30 cm2/V·s or higher.
Claims4
A semiconductor device comprising at least:
- a crystalline oxide semiconductor layer having a band gap of 3 eV or more;
- and
- a high-resistance oxide film on which the crystalline oxide semiconductor layer is located,
- wherein the high-resistance oxide film has a resistance of 1.0×106 Ω·cm or higher, and
- wherein the semiconductor device has a field-effect mobility of 30 cm2/V's or higher.
2 more elements
A semiconductor device comprising at least:
- a crystalline oxide semiconductor layer having a band gap of 3 eV or more,
- wherein the crystalline oxide semiconductor layer is in contact with a gate insulating film and contains Ga2O3 or a mixed crystal thereof,
- wherein the semiconductor device has a field-effect mobility of 30 cm2/V·s or higher, and
- wherein the semiconductor device is configured to allow a drain current to flow upon a drain voltage (Vd) being 10 V and a gate voltage (Vg) being 4 V or more.
1 more element
A semiconductor device comprising at least:
- a crystalline oxide semiconductor layer having a band gap of 3 eV or more,
- wherein the crystalline oxide semiconductor layer is in contact with a gate insulating film and contains Ga2O3 or a mixed crystal thereof,
- wherein the semiconductor device has a field-effect mobility of 30 cm2/V·s or higher, and
- wherein the semiconductor device is configured to allow a drain current of 10 μA or more to flow upon drain voltage (Vd) being 10 V and gate voltage (Vg) being 5 V or more.
1 more element
Dependencies are inferred from the claim text.