Bottom channel trench isolated gate all around (GAA) field effect transistor (FET)

Abstract

A gate all around (GAA) field effect transistor (GAA FET) is described. The GAA FET includes a substrate, having a nanosheet structure on the substrate. The GAA FET also includes a source/drain (SD) region in the substrate and coupled to a first end of the nanosheet structure. The GAA FET further includes a drain/source (DS) region in the substrate and coupled to a second end opposite the first end of the nanosheet structure. The GAA FET also includes a metal gate on the nanosheet structure to define channels between the source/drain region and the drain/source region. The GAA FET further includes a trench oxide blocking a bottom channel of the channels.

Dependencies are inferred from the claim text.