Semiconductor device

A semiconductor device comprising:

• a substrate including an upper surface and a lower surface that are opposite each other in a first direction;
• a first sheet pattern on the upper surface of the substrate, the first sheet pattern including a first end and a second end;
• a gate electrode extending in a second direction on the upper surface of the substrate, the gate electrode surrounding the first sheet pattern;
• a first source/drain pattern connected to the first end of the first sheet pattern;
• a second source/drain pattern connected to the second end of the first sheet pattern;
• a first source/drain contact extending in the first direction, the first source/drain contact being connected to the first source/drain pattern;
• and
• a second source/drain contact extending in the first direction, the second source/drain contact being connected to the second source/drain pattern, wherein
• a depth from an upper surface of the gate electrode to a lowermost portion of the first source/drain contact is greater than a depth from the upper surface of the gate electrode to a lowermost portion of the first source/drain pattern, and
• a depth from the upper surface of the gate electrode to a lowermost portion of the second source/drain contact is greater than or equal to a depth from the upper surface of the gate electrode to a lowermost portion of the second source/drain pattern,
• wherein a height of the first source/drain contact in the first direction is greater than a height of the second source/drain contact in the first direction.

A semiconductor device comprising:

• a substrate including an upper surface and a lower surface that are opposite each other in a first direction;
• a sheet pattern on the upper surface of the substrate, the sheet pattern including a first end and a second end;
• a gate electrode extending in a second direction on the upper surface of the substrate, the gate electrode surrounding the sheet pattern;
• a first source/drain pattern connected to the first end of the sheet pattern;
• a second source/drain pattern connected to the second end of the sheet pattern;
• a contact blocking pattern in the substrate;
• a first source/drain contact connected to the first source/drain pattern, the first source/drain contact penetrating through the substrate;
• and
• a second source/drain contact connected to the second source/drain pattern, the second source/drain contact being in contact with the contact blocking pattern.