Transistor device having a termination region and method of producing the transistor device

A method of producing a transistor device, the method comprising:

• blanket implanting a body region of a first conductivity type into a first active cell region and a termination region of a semiconductor substrate, the termination region being interposed between the first active cell region and an edge of the semiconductor substrate;
• forming a plurality of transistor cells in the first active cell region, each transistor cell comprising a gate trench formed in the body region;
• forming, in the termination region, a first termination trench that laterally surrounds the first active cell region and extends through the body region so that the body region is interrupted in the termination region by the first termination trench;
• and
• forming a first doped region of the first conductivity type that follows the first termination trench and adjoins part of a bottom of the first termination trench, the first doped region terminating deeper in the semiconductor substrate than the body region and being off-center with reference to a longitudinal centerline of the first termination trench.