Thin film capacitors

A device comprising:

• a three-dimensional (3D) metal-insulator-metal (MIM) capacitor comprising:
• a glass core;
• a through glass via (TGV) in the glass core including a first conductive material, the first conductive material forming a first electrode of the 3D MIM capacitor;
• a second conductive material acting as a second electrode of the 3D MIM capacitor;
• and
• a dielectric material in contact with the first and second conductive materials, the dielectric material extending vertically and horizontally and physically separating the first and second conductive materials;
• electrical routing electrically connected to, on, and in contact with the 3D MIM capacitor;
• and
• a die on and electrically connected to the electrical routing.

A method of in-situ forming a three-dimensional (3D) capacitor on a package, the method comprising:

• forming a through glass via (TGV) in a glass core;
• forming a first electrode (i) in the TGV, (ii) at least partially on and including the TGV, or (iii) at least partially in a blind TGV (BTGV) adjacent the TGV;
• conformally depositing a dielectric material directly on the first electrode, wherein the dielectric material extending vertically and horizontally, and wherein conformally depositing the dielectric material includes using initiated chemical vapor deposition (iCVD);
• and
• forming a second electrode on and in contact with the dielectric material.