Operation method of ferroelectric memory

A memory device, comprising:

• a set of ferroelectric memory cells;
• and
• a peripheral circuit coupled to the set of ferroelectric memory cells and configured to:
• write a first data bit having a first value to a first ferroelectric memory cell of the set of ferroelectric memory cells at a first time;
• write a sign bit having the first value to second ferroelectric memory cell of the set of ferroelectric memory cells at the first time, the sign bit indicating a polarity of the first ferroelectric memory cell and the second ferroelectric memory cell;
• receive a read-operation request or a write-operation request for the first ferroelectric memory cell at a second time following the first time;
• in response to the read-operation request or the write-operation request, read the sign bit from the second ferroelectric memory cell at the second time;
• and
• in response to the sign bit having a second value at the second time,
• invert the first data bit from the second value to the first value;
• and
• read the first data bit with the first value from the first ferroelectric memory cell after the inverting.