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US 12,770,666 B2Granted
Storage device
AssigneeKioxia Corporation
InventorsHyung-Woo Ahn, Hyungjun Cho, Takuya Shimano, Naoki Akiyama, Kenichi Yoshino
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Abstract
According to one embodiment, a storage device includes a stacked layer structure including a switching element, an electrode including a first electrode portion, and a variable resistance element, which are stacked in a first direction, wherein the switching element and the electrode are in contact with each other in the first direction, and a first face of the first electrode portion on a side of the switching element is in contact with a second face that is inside the stacked layer structure and that is larger than the first face.
Claims17
A storage device comprising:
- a stacked layer structure comprising a switching element, an electrode including a first electrode portion, and a variable resistance element, which are stacked in a first direction,
- wherein:
- the switching element and the electrode are in contact with each other in the first direction,
- a first face of the first electrode portion on a side of the switching element is in contact with a second face that is inside the stacked layer structure and that is larger than the first face, and
- the switching element is sandwiched between the electrode and the variable resistance element in the first direction.
2 more elements
Dependencies are inferred from the claim text.