Method for generating proximity correction model, method for processing proximity correction using generated proximity correction model and proximity correction system thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsSang Chul Yeo, Jae Won Yang
Life of this patent
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Abstract
A method for generating a proximity correction model which is performed by a computing system is provided. The method comprises acquiring a plurality of shot images on a wafer after performing a first process using a first layout, generating an overlap image obtained by overlap of the plurality of shot images, and performing machine learning on the proximity correction model, using an image of the first layout and the overlap image.
Claims19
A method for generating a proximity correction model which is performed by a computing system, the method comprising:
- acquiring a plurality of shot images of a wafer after performing a first process on the wafer using a first layout;
- generating an overlap image, the overlap image obtained by overlapping the plurality of shot images;
- and
- performing machine learning on the proximity correction model such that the proximity correction model is configured to generate a predicted image of a pattern formed after performing the first process using a target layout, the performing the machine learning including using training data including an image of the first layout and the overlap image,
- wherein the generating the overlap image comprises
- extracting contours of each of plurality of shot images,
- dithering the extracted contours of each of the plurality of shot images, and
- generating the overlap image by overlapping the dithered contours of each of the plurality of shot images.
A proximity correction method of a manufacturing process which is performed by a computing system, the method comprising:
- inputting, to a machine-learned proximity correction model, image data of a first layout;
- generating, using output data of the proximity correction model, a predicted image of a pattern formed after performing a first process using the first layout;
- adjusting the first layout by performing a proximity correction process on the first layout, the proximity correction process based on a difference between the predicted image and a target image;
- and
- performing a process of the manufacturing process using the first layout on which the proximity correction process was performed,
- wherein the proximity correction model is machine-learned using an overlap image obtained by overlapping a plurality of shot images of a wafer after performing the first process on the wafer.
A proximity correction process system comprising:
- a communication interface configured to receive image data of a first layout;
- storage storing executable data of a computer program;
- memory;
- and
- a processor configured to execute computer programs loaded into the memory,
- wherein the computer program comprises instructions, which when executed by the processor causes the proximity correction process system to
- input the received image data of the first layout to a proximity correction model,
- generate a predicted image of a pattern formed after execution of a first process using the first layout using output data of the proximity correction model, and
- adjust the first layout by performing a proximity correction process on the first layout, the proximity correction process based on a difference between the predicted image and a target image, and
- performing a process of a manufacturing process using the first layout on which the proximity correction process was performed,
- wherein the proximity correction model is machine-learned using an overlap image obtained by overlapping a plurality of shot images on a wafer after execution of the first process.
Dependencies are inferred from the claim text.