Selective hardmask on hardmask

A method of manufacturing a semiconductor device, the method comprising:

• forming a patterned hardmask over an underlying target layer on a substrate;
• and
• performing plasma fabrication operations in parallel on the patterned hardmask and underlying target layer in a plasma etching chamber using a plasma etch gas and a selective source gas, wherein the selective source gas comprises a chemical compound comprising a halogen gas that can be dissociated into a metal and a halogen, the plasma fabrication operations comprising:
• dissociating the metal and the halogen in the selective source gas;
• forming a protective cap on the patterned hardmask using the metal that has been dissociated;
• and
• removing portions of the underlying target layer that are not covered by the patterned hardmask using the plasma etch gas and the halogen that has been dissociated.

A method of manufacturing a semiconductor device, the method comprising:

• forming a patterned hardmask over an underlying target layer on a substrate;
• and
• performing plasma fabrication operations in parallel on the patterned hardmask and underlying target layer in a plasma etching chamber using a plasma etch gas and a selective source gas, the plasma fabrication operations including:
• forming a protective cap on the patterned hardmask thereby-forming a combined hardmask comprising the patterned hardmask and the protective cap while removing portions of the underlying target layer that are not covered by the patterned hardmask.