Apparatus and method for semiconductor oxide film ellipsometric amplitude sensor

An apparatus for a semiconductor oxide film ellipsometric amplitude sensor, comprising:

• a fine channel structure including a bed, a substrate formed on the bed, a dielectric thin film formed on the substrate, a cover having an incident window and a reflective window on one side and the other side, respectively, and installed on the bed, and a fine channel formed by combination of the cover and the bed;
• a sample injector configured to form an adsorption layer of a sample on the dielectric thin film by injecting a buffer containing a biomaterial sample into the fine channel;
• a polarized light generator configured to emit incident light polarized through the incident window to the adsorption layer at an incident angle θ satisfying a p-wave or s-wave non-reflective condition;
• and
• a polarized light detector configured to detect an ellipsometric amplitude angle by measuring reflective light, which has passed through the reflective window after reflecting from the adsorption layer, separately with reflectance of p-wave and s-wave,
• wherein a plurality of adsorption layers is formed in one fine channel,
• wherein the polarized light generator is configured to emit a plurality of pieces of incident light to the plurality of adsorption layers, respectively, and
• wherein the polarized light detector includes a light detection unit that obtains predetermined optical data by detecting a plurality of pieces of reflective light by the plurality of pieces of incident light.

An apparatus for a semiconductor oxide film ellipsometric amplitude sensor, comprising:

• a fine channel structure including a bed, a substrate formed on the bed, a dielectric thin film formed on the substrate, a cover having an incident window and a reflective window on one side and the other side, respectively, and installed on the bed, and a fine channel that is a channel formed by combination of the cover and the bed;
• a sample injector configured to form an adsorption layer of a sample on the dielectric thin film by injecting a buffer containing a biomaterial sample into the fine channel;
• a polarized light generator configured to emit incident light polarized through the incident window to the adsorption layer at an incident angle θ satisfying a p-wave or s-wave non-reflective condition;
• and
• a polarized light detector configured to detect an ellipsometric amplitude angle by measuring reflective light, which has passed through the reflective window after reflecting from the adsorption layer, separately with reflectance of p-wave and s-wave,
• wherein the polarized light detector includes a polarizing beamsplitter configured to split the reflective light into two pieces of polarized light and a light detection unit configured to obtain predetermined optical data by detecting the two pieces of light, and
• wherein the polarized light generator includes a beam expander configured to expand an emission area of the incident light.