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US 12,768,076 B2Granted
AlN monocrystal plate including a Ga metal component containing region
AssigneeNGK Insulators, Ltd.
InventorsHirohisa Ogawa, Yoshimasa Kobayashi, Kazuki Iida, Hiroyuki Shibata
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Abstract
An AlN monocrystal plate disclosed herein may include: a first surface in a thickness direction; and a second surface opposing the first surface. A metal component containing region may be disposed substantially parallel to the first surface in an intermediate portion between the first surface and the second surface. In the metal component containing region, a plurality of metal components may be introduced and distributed. A type of the metal components may be Ga.
Claims8
An aluminum nitride (AlN) monocrystal plate comprising:
- a first surface in a thickness direction;
- and
- a second surface opposing the first surface,
- wherein
- a metal component containing region is disposed substantially parallel to the first surface in an intermediate portion between the first surface and the second surface, wherein in the metal component containing region, a plurality of metal components is introduced and distributed, and
- wherein Ga is contained in an amount of 50 wt % or more among the plurality of metal components in the metal component containing region.
3 more elements
Dependencies are inferred from the claim text.