Methods for forming impurity free metal alloy films

A method of depositing a metal film, the method comprising:

• exposing at least a portion of a substrate surface to a first halide precursor comprising a compound having general Formula (I)
• wherein M is a metal selected from one or more of zirconium (Zr), lanthanum (La), cerium (Ce), zinc (Zn), chromium (Cr), or vanadium (V), Q is a halogen selected from CI, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, cyclopentadienyl, amidinate, diazadiene, or amidate, and m is from 0 to 6,
• exposing at least a portion of the substrate surface to an organosilane reactant comprising a compound of general Formula (II) or general Formula (III):
• wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl;
• and X, Y, X′, and Y′ are independently selected from nitrogen (N) and carbon (C);
• exposing at least a portion of the substrate surface to a second halide precursor comprising the compound having the general Formula (I), wherein M is a metal selected from one or more of zirconium (Zr), lanthanum (La), cerium (Ce), zinc (Zn), chromium (Cr), or vanadium (V), and the first halide precursor is different from the second halide precursor;
• and
• expose at least a portion of the substrate surface to the organosilane reactant comprising the compound of general Formula (II) or general Formula (III),
• to deposit the metal film on the substrate surface, the metal film substantially free of carbon.

A method of depositing a metal film, the method comprising:

• exposing at least a portion of a substrate to a first halide precursor comprising a compound having general Formula (I)
• MQzRm (I),
• wherein M is a metal independently selected from one or more of scandium (Sc), yttrium (Y), lanthanum (La), actinium (Ac), zirconium (Zr), vanadium (V), chromium (Cr), manganese (Mn), rhenium (Re), ruthenium (Ru), osmium (Os), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), or zinc (Zn), Q is a halogen selected from CI, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, cyclopentadienyl, amidinate, diazadiene, or amidate, and m is from 0 to 6,
• exposing at least a portion of the substrate to an organosilane reactant comprising a compound of general Formula (II) or general Formula (III):
• wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl;
• and X, Y, X′, and Y′ are independently selected from nitrogen (N) and carbon (C);
• exposing at least a portion of the substrate to a second halide precursor comprising the compound having the general Formula (I), wherein M of the second halide precursor is aluminum (AI);
• and
• exposing at least a portion of the substrate to the organosilane reactant comprising the compound of general Formula (II) or general Formula (III),
• to deposit the metal film on the substrate, the metal film comprising an alloy of the metal M from the first halide precursor and aluminum (AI), the metal film substantially free of carbon.